| PART |
Description |
Maker |
| KMM5324004BSWG KMM5324004BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5364005BSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5368003BSWG KMM5368003BSW |
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5322200C2WG KMM5322200C2W |
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5324004CSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM53232004CK |
32MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| KMM5328100CK KMM5328100CKG KMM5328000CKG KMM532800 |
8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM53232000CK KMM53232000CKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM5321204C2W KMM5321204C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
